IRF830FI transistor equivalent, n-channel mosfet transistor.
*Desinged for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNI.
*Drain Current
–ID= 3.0A@ TC=25℃
*Drain Source Voltage-
: VDSS= 500V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance.
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